View IR11672AS11_4761630.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com ? 2009-2011 international rectifier july 13, 2011 ir11672as advanced smart rectifier tm control ic features secondary side high speed sr controller dcm, crcm flyback and resonant half-bridge topologies 200v proprietary ic technology max 500khz switching frequency anti-bounce logic and uvlo protection 7a peak turn off drive current micropower start-up & ultra low quiescent current 10.7v gate drive clamp 50ns turn-off propagation delay vcc range from 11.3v to 20v direct sensing of mosfet drain voltage enable function synchronized with mosf et vds transition cycle by cycle mot check circuit prevents multiple false trigger gate pulses lead-free compatible with 0.3 w standby, energy star, cecp, etc. typical applications lcd & pdp tv, telecom smps, ac-dc adapters, atx smps, server smps product summary topology flyback, resonant half-bridge vd 200v v out 10.7v i o+ & i o- (typical) +2a & -7a turn on propagation delay 60ns (typical) turn off propagation delay 50ns (typical) package options 8-lead soic typical connection diagram rmot cdc rg vd 5 vs 6 mot 3 ovt 2 en 4 gnd 7 vgate 8 vcc 1 u1 ir11671 q1 xfm co load rdc vin rtn ci rs cs ir11672as datasheet no - pd 97469
ir11672as www.irf.com ? 2009-2011 international rectifier 2 table of contents page description 3 qualification information 4 absolute maximum ratings 5 electrical characteristics 6 functional block diagram 8 input/output pin equivalent circuit diagram 9 lead definitions 10 lead assignments 10 application information and additional details 12 package details 22 tape and reel details 23 part marking information 24 ordering information 25
ir11672as www.irf.com ? 2009-2011 international rectifier 3 description ir11672a is a smart secondary-side driver ic design ed to drive n-channel power mosfets used as synchronous rectifiers in isolated flyback and reso nant half-bridge converters. the ic can control one or more paralleled n-mosfets to emulate the behavior of sch ottky diode rectifiers. the drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. the cycle-by-cycle mot protection circuit can automatically detect no loa d condition and turn off gate driver output to avoid negative current flowing through the mosfets. rugge dness and noise immunity are accomplished using an advanc ed blanking scheme and double-pulse suppression which allow reliable operation in all operating mod es.
ir11672as www.irf.com ? 2009-2011 international rectifier 4 qualification information ? qualification level industrial ?? comments: this family of ics has passed jedecs industrial qualification. irs consumer qualificat ion level is granted by extension of the higher industrial level . moisture sensitivity level msl2 ??? 260c (per ipc/jedec j-std-020) esd machine model class b (per jedec standard jesd22-a115) human body model class 2 (per eia/jedec standard eia/jesd22-a114) ic latch-up test class i, level a (per jesd78) rohs compliant yes ? qualification standards can be found at internation al rectifiers web site http://www.irf.com/ ?? higher qualification ratings may be available shoul d the user have such requirements. please contact your international rectifier sales representative for fu rther information. ??? higher msl ratings may be available for the specifi c package types listed here. please contact your international rectifier sales representative for fu rther information.
ir11672as www.irf.com ? 2009-2011 international rectifier 5 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all v oltage parameters are absolute voltages referenced to com, all currents are defined positive into any lead. the thermal resistance and power dissipation ratings ar e measured under board mounted and still air condit ions. parameters symbol min. max. units remarks supply voltage v cc -0.3 20 v enable voltage v en -0.3 20 v cont. drain sense voltage v d -3 200 v pulse drain sense voltage v d -5 200 v source sense voltage v s -3 20 v gate voltage v gate -0.3 20 v v cc =20v, gate off operating junction temperature t j -40 150 c storage temperature t s -55 150 c thermal resistance r q ja 128 c/w soic-8 package power dissipation p d 970 mw soic-8, t amb =25c switching frequency fsw 500 khz recommended operating conditions for proper operation the device should be used with in the recommended conditions. symbol definition min. max. units v cc supply voltage 11.4 18 v v d drain sense voltage -3 200 t j junction temperature -25 125 c fsw switching frequency --- 500 khz recommended component values symbol component min. max. units r mo t mot pin resistor value 5 75 k w
ir11672as www.irf.com ? 2009-2011 international rectifier 6 electrical characteristics vcc=15v and t a = 25c unless otherwise specified. the output volt age and current (v o and i o ) parameters are referenced to gnd (pin7). supply section parameters symbol min. typ. max. units remarks supply voltage operating range v cc 11.4 18 v gbd v cc turn on threshold v cc on 9.8 10.55 11.3 v v cc turn off threshold v cc uvlo 8.4 9 9.7 v (under voltage lock out) v cc turn on/off hysteresis v cc hyst 1.55 v operating current i cc 8.5 10 ma c load =1nf,f sw =400khz 50 65 ma c load =10nf,f sw =400khz quiescent current i qcc 1.8 2.2 ma start-up current i cc start 100 200 a v cc =v cc on - 0.1v sleep current i sleep 150 200 a v en =0v, v cc =15v enable voltage high v enhi 2.15 2.70 3.2 v enable voltage low v enlo 1.2 1.6 2.0 v enable pull-up resistance r en 1.5 m w gbd comparator section parameters symbol min. typ. max. units remarks turn-off threshold v th1 -7 -3.5 0 mv ovt = 0v, v s =0v -14 -9.5 -6 ovt floating, v s =0v -22 -18 -14 ovt = vcc, v s =0v turn-on threshold v th2 -150 -50 mv hysteresis v hyst 55 mv input bias current i ibias1 1 7.5 a v d = -50mv input bias current i ibias2 30 100 a v d = 200v comparator input offset v offset 2 mv gbd input cm voltage range v cm -0.15 2 v one-shot section parameters symbol min. typ. max. units remarks blanking pulse duration t blank 9 17 25 s reset threshold v th3 2.5 v v cc =10v C gbd 5.4 v v cc =20v C gbd hysteresis v hyst3 40 mv v cc =10v C gbd
ir11672as www.irf.com ? 2009-2011 international rectifier 7 electrical characteristics vcc=15v and t a = 25c unless otherwise specified. the output volt age and current (v o and i o ) parameters are referenced to gnd (pin7). minimum on time section parameters symbol min. typ. max. units remarks minimum on time t onmin 190 240 290 ns r mot =5k w, v cc =12v 2.48 3.1 3.72 s r mot =75k w, v cc =12v gate driver section parameters symbol min. typ. max. units remarks gate low voltage v glo 0.3 0.5 v i gate = 200ma gate high voltage v gth 9.0 10.7 12.5 v v cc =12v-18v (internally clamped) rise time t r1 18 ns c load = 1nf, v cc =12v t r2 125 ns c load = 10nf, v cc =12v fall time t f1 10 ns c load = 1nf, v cc =12v t f2 30 ns c load = 10nf, v cc =12v turn on propagation delay t don 60 95 ns v ds to v gate -100mv overdrive turn off propagation delay t doff 50 75 ns v ds to v gate -100mv overdrive pull up resistance r up 4 w i gate = 1a C gbd pull down resistance r down 0.7 w i gate = -200ma output peak current(source) i o source 2 a c load = 10nf C gbd output peak current (sink) i o sink 7 a c load = 10nf C gbd
ir11672as www.irf.com ? 2009-2011 international rectifier 8 functional block diagram
ir11672as www.irf.com ? 2009-2011 international rectifier 9 i/o pin equivalent circuit diagram
ir11672as www.irf.com ? 2009-2011 international rectifier 10 lead definitions pin# symbol description 1 vcc supply voltage 2 ovt offset voltage trimming 3 mot minimum on time 4 en enable 5 vd fet drain sensing 6 vs fet source sensing 7 gnd ground 8 vgate gate drive output lead assignments
ir11672as www.irf.com ? 2009-2011 international rectifier 11 detailed pin description vcc: power supply this is the supply voltage pin of the ic and it is monitored by the under voltage lockout circuit. it is possible to turn off the ic by pulling this pin below the minim um turn off threshold voltage, without damage to th e ic. to prevent noise problems, a bypass ceramic capacit or connected to vcc and com should be placed as close as possible to the ir11672a. this pin is inte rnally clamped. ovt: offset voltage trimming the ovt pin will program the amount of input offset voltage for the turn-off threshold v th1 . the pin can be optionally tied to ground, to vcc or left floating, to select 3 ranges of input offset trimming. this programming feature allows for accommodating d ifferent r dson mosfets. mot: minimum on time the mot programming pin controls the amount of mini mum on time. once v th2 is crossed for the first time, the gate signal will become active and turn on the power fet. spurious ringings and oscillations can t rigger the input comparator off. the mot blanks the input comparator keeping the fet on for a minimum time. the mot is programmed between 200ns and 3us (typ.) by using a resistor referenced to com. en: enable this pin is used to activate the ic sleep mode by pulling the voltage level below 1.6v (typ). in sle ep mode the ic will consume a minimum amount of current. all sw itching functions will be disabled and the gate wil l be inactive. vd: drain voltage sense vd is the voltage sense pin for the power mosfet dr ain. this is a high voltage pin and particular care must be taken in properly routing the connection to the power mosfet drain. additional filtering and or current limiting on thi s pin are not recommended as it would limit switchi ng performance of the ic. vs: source voltage sense vs is the differential sense pin for the power mosf et source. this pin must not be connected directly to the power ground pin (7) but must be used to create a k elvin contact as close as possible to the power mos fet source pin. gnd: ground this is ground potential pin of the integrated cont rol circuit. the internal devices and gate driver are referenced to this point. vgate: gate drive output this is the gate drive output of the ic. drive vol tage is internally limited and provides 2a peak sou rce and 7a peak sink capability. although this pin can be dire ctly connected to the power mosfet gate, the use of minimal gate resistor is recommended, especially wh en putting multiple fets in parallel. care must be taken in order to keep the gate loop a s short and as small as possible in order to achiev e optimal switching performance.
ir11672as www.irf.com ? 2009-2011 international rectifier 12 application information and additional details state diagram uvlo/sleep mode the ic remains in the uvlo condition until the volt age on the vcc pin exceeds the v cc turn on threshold voltage, v cc on . during the time the ic remains in the uvlo state, the gate drive circuit is inactive and the ic draws a quiescent current of i cc start . the uvlo mode is accessible from any other state of operation whenever the ic supply voltage condition of vcc < v cc uvlo occurs. the sleep mode is initiated by pulling the en pin b elow 1.6 v (typ). in this mode the ic is essentially shut d own and draws a very low quiescent supply current. normal mode and synchronized enable function the ic enters in normal operating mode once the uvl o voltage has been exceeded and the en voltage is above v enhi threshold. when the ic enters the normal mode from the uvlo mode , the gate output is disabled (stays low) until v ds exceeds v th3 to activate the gate. this ensure s that the gate output is not e nabled in the middle of a switching cycle. this log ic prevents any reverse currents across the device due to the minimum on time function in the ic. the gate wi ll continuously drive the sr mosfet after this one- time activation. the cycle by cycle mot protection circu it is enabled in normal mode. mot protection mode if the secondary current conduction time is shorter than the mot (minimum on time) setting, the next d river output is disabled. this functi on can avoid reverse current that occurs when the s ystem works at very low duty- cycles or at very light/no load conditions and redu ce system standby power consumption by disabling gate outputs. the cycle by cycle mot check circuit is always activated under normal mode and mot protection mode, so that the ic can automatically r esume normal operation once the load increases to a level and the secondary current conduction time is longer than mot.
ir11672as www.irf.com ? 2009-2011 international rectifier 13 general description the ir11672a smart rectifier ic can emulate the ope ration of diode rectifier by properly driving a synchronous rectifier (sr) mosfet. the direction of the rectified current is sensed by the input compa rator using the power mosfet r dson as a shunt resistance and the gate pin of the mosf et is driven accordingly. internal blanking logic is used to pre vent spurious transitions and guarantee operation i n continuous (ccm), discontinuous (dcm) and critical (crcm) conduction mode. ir11672a is suitable for flyback and resonant half- bridge topologies. v gate v th1 v th2 v th3 v ds figure 1: input comparator thresholds flyback application the modes of operation for a flyback circuit differ mainly for the turn-off phase of the sr switch, wh ile the turn-on phase of the secondary switch (which corres ponds to the turn off of the primary side switch) i s identical. turn-on phase when the conduction phase of the sr fet is initiate d, current will start flowing through its body diod e, generating a negative v ds voltage across it. the body diode has generally a much higher voltage drop than the one caused by the mosfet on resistance and therefor e will trigger the turn-on threshold v th2 . at that point the ir11672a will drive the gate of m osfet on which will in turn cause the conduction vo ltage vds to drop down. this drop is usually accompanied by some amount of ringing, that can trigger the in put comparator to turn off; hence, a minimum on time (mot) blanking period is used that will maintain th e power mosfet on for a minimum amount of time. the programmed mot will limit also the minimum duty cycle of the sr mosfet and, as a consequence, the max duty cycle of the primary side switch. dcm/crcm turn-off phase once the sr mosfet has been turned on, it will rema in on until the rectified current will decay to the level where v ds will cross the turn-off threshold v th1 . this will happen differently depending on the mod e of operation. in dcm the current will cross the threshold with a relatively low di/dt. once the threshold is crossed , the current will start flowing again thru the body diod e, causing the v ds voltage to jump negative. depending on the amount of residual current, v ds may trigger once again the turn on threshold: for this reason v th2 is blanked for a certain amount of time (t blank ) after v th1 has been triggered. the blanking time is internally set. as soon as v ds crosses the positive threshold v th3 also the blanking time is terminated and the ic is ready for next conduction cycle.
ir11672as www.irf.com ? 2009-2011 international rectifier 14 i prim i sec v sec v prim time time t1 t2 t3 figure 2: primary and secondary currents and voltag es for dcm mode i prim i sec v sec v prim time time t1 t2 figure 3: primary and secondary currents and voltag es for crcm mode ccm turn-off phase in ccm mode the turn off transition is much steeper and di/dt involved is much higher. the turn on pha se is identical to dcm or crcm and therefore wont be rep eated here. during the sr fet conduction phase the current will decay linearly, and so will v ds on the sr fet. once the primary switch will start to turn back on, the sr fet current will rapidly decrease crossing v th1 and turning the gate off. the turn off speed is critica l to avoid cross conduction on the primary side and reduce switching losses. also in this case a blanking period will be applied , but given the very fast nature of this transition , it will be reset as soon as v ds crosses v th3 .
ir11672as www.irf.com ? 2009-2011 international rectifier 15 i prim i sec v sec v prim time time t1 t2 figure 4: primary and secondary currents and voltag es for ccm mode the operation waveforms of ir11672a in a flyback co nverter under ccm mode and dcm/crcm were shown in figure 5 and figure 6 respectively. i sec v ds time time t1 t2 v th1 v th2 v th3 blanking mot time gate drive figure 5: secondary side ccm operation
ir11672as www.irf.com ? 2009-2011 international rectifier 16 gate drive i sec v ds blanking time time t1 t2 v th1 v th2 v th3 10us blanking mot figure 6: secondary side dcm/crcm operation resonant half-bridge application the typical application circuit of ir11672a in llc half-bridge is shown in figure 7. rmot2 cvcc2 rcc2 rmot1 cvcc1 rcc1 vcc 1 ovt 2 mot 3 en 4 gate 8 gnd 7 vs 6 vd 5 ir11672a lr t1 cout m2 lm m1 vin cr rtn m3 m4 rg1 vout vcc 1 ovt 2 mot 3 en 4 gate 8 gnd 7 vs 6 vd 5 ir11672a rg2 figure 7: resonant half-bridge application circuit in resonant half-bridge converter, the turn-on phas e and turn-off phase is similar to flyback except t he current shape is sinusoid. the typical operation waveform c an be found below.
ir11672as www.irf.com ? 2009-2011 international rectifier 17 figure 8: resonant half-bridge operation waveform mot protection mode the mot protection prevents reverse current in sr m osfet which could happen at light load if the mot time is set very long. the ic disables the gate out put in the protection mode and automatically resume to normal operation as the load increasing to a level where the sr current conduction time is longer than mot. this function works in both flyback and resonant ha lf-bridge topologies. figure 9 is an example in fly back converter. figure 9: mot protection mode
ir11672as www.irf.com ? 2009-2011 international rectifier 18 synchronized enable function sync enable function guarantees the vgate always st arts switching at the beginning of a switching cycl e. this function works in both flyback and resonant ha lf-bridge topologies. figure 10 is an example in re sonant half-bridge converter. figure 10: synchronized enable function (resonant h alf-bridge) general timing waveform t vcc vcc on uvlo vcc uvlo normal uvlo figure 11: vcc uvlo 10% 90% t rise v th2 t fall v th1 t doff t don 50% v ds v gate figure 12: timing waveform
ir11672as www.irf.com ? 2009-2011 international rectifier 19 0.01 0.1 1 10 5 v 10 v 15 v 20 v i supply (ma) supply voltage figure 13: supply current vs. supply voltage 8.0 v 8.5 v 9.0 v 9.5 v 10.0 v 10.5 v 11.0 v -50 c 0 c 50 c 100 c 150 c vcc uvlo thresholds temperature vcc on vcc uvlo figure 14: undervoltage lockout vs. temperature 1.0 1.2 1.4 1.6 1.8 2.0 -50 c 0 c 50 c 100 c 150 c i cc supply current (ma) temperature i qcc figure 15: icc quiescent currrent vs. temperature 7.5 7.7 7.9 8.1 8.3 8.5 -50 c 0 c 50 c 100 c 150 c i cc supply current (ma) temperature icc @400khz, c load =1nf figure 16: icc supply currrent @1nf load vs. temperature
ir11672as www.irf.com ? 2009-2011 international rectifier 20 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 -50 c 0 c 50 c 100 c 150 c v th1 threshold (mv) temperature ovt=gnd ovt=floating ovt=vcc figure 17: v th1 vs. temperature -150.0 -100.0 -50.0 0.0 -50 c 0 c 50 c 100 c 150 c v th2 thresholds (mv) temperature figure 18: v th2 vs. temperature 0.0 25.0 50.0 75.0 100.0 -50 c 0 c 50 c 100 c 150 c comparator hysteresis v hyst (mv) temperature figure 19: comparator hysteresis vs. temperature -11.2 -11.0 -10.8 -10.6 -10.4 -10.2 -10.0 -9.8 -9.6 -9.4 -9.2 -9.0 -50 c 0 c 50 c 100 c 150 c v th1 threshold (mv) temperature vs=-150mv vs=0v vs=+2v figure 20: v th1 vs. temperature and common mode (ovt=floating)
ir11672as www.irf.com ? 2009-2011 international rectifier 21 -90.0 -85.0 -80.0 -75.0 -70.0 -65.0 -60.0 -55.0 -50.0 -50 c 0 c 50 c 100 c 150 c v th1 threshold (mv) temperature vs=-150mv vs=0v vs=+2v figure 21: v th2 vs. temperature and common mode 0 us 1 us 2 us 3 us 4 us -50 c 0 c 50 c 100 c 150 c minimum on time (us) temperature rmot=5k rmot=75k figure 22: mot vs temperature 1.0 v 1.5 v 2.0 v 2.5 v 3.0 v -50 c 0 c 50 c 100 c 150 c enable thresholds temperature ven hi ven lo figure 23: enable threshold vs. temperature 35 ns 40 ns 45 ns 50 ns 55 ns 60 ns 65 ns 70 ns 75 ns 80 ns -50 c 0 c 50 c 100 c 150 c propagation delay temperature turn-on propagation delay turn-off propagation delay figure 24: turn-on and turn-off propagation delay vs. temperature
ir11672as www.irf.com ? 2009-2011 international rectifier 22 package details: soic8n
ir11672as www.irf.com ? 2009-2011 international rectifier 23 tape and reel details: soic8n e f a c d g a b h note : controlling dim ension in m m loaded tape feed direction a h f e g d b c carrier tape dimension for 8soicn code min max min max a 7.90 8.10 0.311 0.318 b 3.90 4.10 0.153 0.161 c 11.70 12.30 0.46 0.484 d 5.45 5.55 0.214 0.218 e 6.30 6.50 0.248 0.255 f 5.10 5.30 0.200 0.208 g 1.50 n/a 0.059 n/a h 1.50 1.60 0.059 0.062 metric imperial reel dimensions for 8soicn code min max min max a 329.60 330.25 12.976 13.001 b 20.95 21.45 0.824 0.844 c 12.80 13.20 0.503 0.519 d 1.95 2.45 0.767 0.096 e 98.00 102.00 3.858 4.015 f n/a 18.40 n/a 0.724 g 14.50 17.10 0.570 0.673 h 12.40 14.40 0.488 0.566 metric imperial
ir11672as www.irf.com ? 2009-2011 international rectifier 24 part marking information
ir11672as www.irf.com ? 2009-2011 international rectifier 25 ordering information base part number package type standard pack complete part number form quantity ir11672as soic8n tube/bulk 95 ir11672aspbf tape and reel 2500 ir11672astrpbf the information provided in this document is believ ed to be accurate and reliable. however, internatio nal rectifier assumes no responsibility for the consequences of the use of t his information. international rectifier assumes n o responsibility for any infringement of patents or of other rights of third parties which may result from the use of this info rmation. no license is granted by implication or otherwise under any patent or patent rights of international rectifier. the specificat ions mentioned in this document are subject to change without notice. this document su persedes and replaces all information previously su pplied. for technical support, please contact irs technica l assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105

▲Up To Search▲

Price & Availability of IR11672AS11

	To Download IR11672AS11 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .